Temperature-Dependent Electrical Behavior of SiGe-FinFETs with Different Gate Lengths

Abstract

The research investigated the influence of temperature on the sensitivity of MOS and Fin Field-Effect transistor (FinFET) transistors featuring an inhomogeneous composition of 50% silicon and Germanium. Using gate lengths (Lg = 10, 20, and 30 nm) and various thermal conditions, the study analyzed the current–voltage (I–V) characteristics. FinFET transistors exhibit peak thermal sensitivity at 0–1 V, and further reducing channel length increases thermal sensitivity, particularly in the 10–20 nm range. The optimal channel length was determined to be about 10 nm for excellent thermal performance. This research provides detailed temperature analysis that serves as a baseline for developing FinFET transistors with high thermal efficiency and stability across a variety of applications.