A Review on Finfets from Device to Circuit

Authors

  • SADULLA SHAIK

DOI:

https://doi.org/10.31838/jvcs/02.01.03

Keywords:

Fin FET technology, MOSFET, leakage current.

Abstract

FinFET is the multi-gate silicon transistor structure now a day's technology has changing in a brisk space people to achieve the better performance. Although several architectures has been developed in order to achieve the better performance like high speed, low power consumption etc. hence by taking these attributes in to consideration designed a novel Fin-FET technology in replacement of CMOS technology. This paper gives them a detailed art of Fin-FET technology and corresponding challenges, and future trends.

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Published

2020-03-10

How to Cite

SADULLA SHAIK. (2020). A Review on Finfets from Device to Circuit. Journal of VLSI Circuits and Systems, 2(1), 11–13. https://doi.org/10.31838/jvcs/02.01.03

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Section

Articles