Different Casues For Reduction Of Lekage Current In Sram:A State Of The Art

Abstract

As the semiconductor devices are increases the very fast speed ,the size of the portable devices are shrinking down drastically. Hence which results demand for the long battery life for the electronic devices which we are using our day to day life. Memory in electronic device plays a critical role in order to processing the data as well as to store the data. But over the past decade the memory devices(SRAM and DRAM) suffers for the various factors due to leakage power, current etc. In this paper we are going to describe the a detailed study of various techniques to overcome the leakage factors affecting the SARAM devices. out of the several techniques differential leakage power technique has been one of the primary technique to overcome the leakage current in CMOS devices.