DFT Aware Test Architecture for Communication  ICs: ATPG- Based Fault Detection on Lower  Technology Node

Supriya B K; Arunraja A; Bremiga Gopalan Gandhimathi; S Sheeba Rani; N Sudhakar Reddy; Deepali Rani Sahoo

doi:10.31838/jvcs/07.01.13

Authors

Supriya B K Department of Information Science and Engineering, PES College of Engineering, Mandya, Ka https://orcid.org/0009-0003-8400-5078
Arunraja A Department of ECE, Christ University, Kengeri Campus, Bengaluru-Karnataka, India https://orcid.org/0000-0001-8974-6244
Bremiga Gopalan Gandhimathi Department of Law and Business, Northumbria University, London Campus, Coventry, United Kingdom https://orcid.org/0009-0000-3182-0755
S Sheeba Rani Department of Electronics and Communication Engineering, Sri Eshwar College of Engineering, Coimbatore, Tamil Nadu. https://orcid.org/0000-0002-7522-1268
N Sudhakar Reddy Department of Electronics and Communication Engineering, School of Engineering, Mohan Babu University, Tirupati https://orcid.org/0000-0003-0106-3858
Deepali Rani Sahoo Manipal Law School, Jaipur, Manipal University, India https://orcid.org/0000-0001-6949-7439

DOI:

https://doi.org/10.31838/jvcs/07.01.13

Keywords:

Breakdown voltage, ATLAS TCAD, MISHEMTs, High Electron Mobility Transistors, Transconductance , High drain current density

Abstract

In this research, hafnium dioxide (HfO₂) and titanium dioxide (TiO₂) are investigated as advanced gate dielectrics for GaN-based MISHEMTs on diamond substrates. AlGaN/GaN MISHEMTs, incorporating HfO₂ and TiO₂ as gate dielectrics, have been rigorously analyzed and optimized for RF and DC performance through ATLAS TCAD simulations. The MISHEMTs with HfO₂ gate dielectrics exhibited impressive metrics: a high drain current density (I_DS) of 3.62 A/mm, a breakdown voltage (V_BR) of 998 V, a transconductance (g_m) of 1.09 S/mm, and a cutoff frequency (f_T) of 49 GHz. Conversely, the MISHEMTs utilizing TiO₂ as the passivation layer demonstrated even superior performance, achieving an I_DSof 3.7 A/mm, a V_B of 1168 V, a g_m of 1.13 S/mm, and an f_T of 48 GHz. Both dielectric materials contributed to a notably low on-resistance of 4.9 Ω·mm. The synergistic effect of the diamond substrate with high-performance HfO₂ or TiO₂ gate dielectrics positions these MISHEMTs as highly promising candidates for next-generation power switching and RF applications, due to their enhanced efficiency and robustness under high-power and high-frequency conditions. The proposed work improves the performance enhancement of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) with inclusion of diamond substrate. Diamond substrate to its wide energy bandgap ranges of 5.5 eV for used materials for both power electronics and RF applications electrical and Thermal properties are concerned in its high.