DFT Aware Test Architecture for Communication ICs: ATPG- Based Fault Detection on Lower Technology Node

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DOI:

https://doi.org/10.31838/jvcs/07.01.13

Abstract

In this research, hafnium dioxide (HfO₂) and titanium dioxide (TiO₂) are investigated as advanced gate dielectrics for GaN-based MISHEMTs on diamond substrates. AlGaN/GaN MISHEMTs, incorporating HfO₂ and TiO₂ as gate dielectrics, have been rigorously analyzed and optimized for RF and DC performance through ATLAS TCAD simulations. The MISHEMTs with HfO₂ gate dielectrics exhibited impressive metrics: a high drain current density (IDS) of 3.62 A/mm, a breakdown voltage (VBR) of 998 V, a transconductance (gm) of 1.09 S/mm, and a cutoff frequency (fT) of 49 GHz. Conversely, the MISHEMTs utilizing TiO₂ as the passivation layer demonstrated even superior performance, achieving an IDS of 3.7 A/mm, a V_B of 1168 V, a gm of 1.13 S/mm, and an fT of 48 GHz. Both dielectric materials contributed to a notably low on-resistance of 4.9 Ω·mm. The synergistic effect of the diamond substrate with high-performance HfO₂ or TiO₂ gate dielectrics positions these MISHEMTs as highly promising candidates for next-generation power switching and RF applications, due to their enhanced efficiency and robustness under high-power and high-frequency conditions. The proposed work improves the performance enhancement of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) with inclusion of diamond substrate. Diamond substrate to its wide energy bandgap ranges of 5.5 eV for used materials for both power electronics and RF applications electrical and Thermal properties are concerned in its high.

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Published

2025-07-04

How to Cite

Supriya B K, Arunraja A, Bremiga Gopalan Gandhimathi, S Sheeba Rani, N Sudhakar Reddy, & Deepali Rani Sahoo. (2025). DFT Aware Test Architecture for Communication ICs: ATPG- Based Fault Detection on Lower Technology Node. Journal of VLSI Circuits and Systems, 7(1), 106–117. https://doi.org/10.31838/jvcs/07.01.13