A Novel Investigation on p-GaN GATE with and without AlGaN Back Barrier for AlGaN/GaN High Electron Mobility Transistors

Arunraja A; Kishorekumar R; Sangeetha D; Dharmaprakash R; Bharaty K.S; Balamanikandan A

doi:10.31838/JVCS/07.01.18

Authors

Arunraja A Department of Electronics and Communication Engineering, Christ University, Bengaluru, Karnataka, India. https://orcid.org/0000-0001-8974-6244
Kishorekumar R Department of Electronics and Communication Engineering, Christ University, Bengaluru, Karnataka, India. https://orcid.org/0000-0002-0846-3873
Sangeetha D Department of Computer Science and Applications, Dr. Vishwanath Karad MIT World Peace University, Pune, India. https://orcid.org/0000-0002-4357-7235
Dharmaprakash R Department of Elecrical and Electronics Engineering, Panimalar Engineering College, Chennai, India https://orcid.org/0000-0001-7489-0470
Bharaty K.S Department of Electrical and Electronics Engineering, School of Engineering, Mohan Babu University, Tirupathi, India. https://orcid.org/0009-0005-8105-045X
Balamanikandan A Department of Electronics and Communication Engineering, School of Engineering, Mohan Babu University, Tirupathi, India. https://orcid.org/0000-0002-2321-0030

DOI:

https://doi.org/10.31838/JVCS/07.01.18

Keywords:

p-GaN Gate, Back Barrier, Silicon Carbide Transconductance, Threshold Voltage, E-mode, Ambient Temperature

Abstract

p- GaN layers is relatively matured and controllable, making p-GaN HEMTs the leading structure that is most likely to be commercialized. The analysis of the gate design parameters like transconductance, breakdown voltage, threshold voltage, JFOM and gate turn-on current of p-GaN devices, which determine the on-state characteristics, needs to be investigated. The AlGaN barrier, p-GaN gate, GaN, AlGaN back barrier, and SiC substrate constitute the structure of p-GAN, which is operated in the E-mode. The use of AlGaN back barrier reduces the punch-through current. Silicon Carbide (SiC) is used as substrate to have lower lattice mismatch with nitride layer. The transfer characteristics, transconductance, threshold voltage, breakdown voltage and JFOM are analyzed. The device demonstrates a positive threshold voltage that varies linearly with changes in ambient temperature. Additionally, the device featuring an AlGaN back barrier shows a higher breakdown voltage of 105V, in contrast to the device lacking a back barrier.